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| UV Enhanced Silicon Photodiode PDU-V104 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .150 [3.81] O .215 [5.46] O .210 [5.33] 45 .060 [1.52] ANODE O .156 [3.96] O .152 [3.86] O.187 [4.75] O.181 [4.60] 2X O.018 [0.46] 65 VIEWING ANGLE CATHODE .100 [2.54] 2X .500 [12.7] MIN CHIP DIMENSIONSINCH [mm] CHIP DIMENSIONS INCH [mm] .125 [3.18] TO-46 PACKAGE .066 [1.68] .046 [1.17] ACTIVE AREA TO-46 PACKAGE .104 [2.64] ACTIVE AREA FEATURES * * * * Low noise UV enhanced High shunt resistance High response DESCRIPTION The PDU-V104 is a UV enhanced silicon PIN packaged in a hermetic TO-46 metal package. APPLICATIONS * Instrumentation * Industrial * Medical ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 MIN MAX 75 +150 +125 +240 UNITS Responsivity (A/W) 0.60 0.50 0.40 0.30 0.20 0.10 0.00 200 250 SPECTRAL RESPONSE V C C C 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 * 1/16 inch from case for 3 seconds max. Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS VR = 10mV VR = 10 mV VR = 0 V, f = 1 MHz Spot Scan l= 365 nm V, VR = 0 V I = 10 A VR = 0V @ l=Peak RL = 50 ,VR = 0 V RL = 50 ,VR = 10 V MIN 1.0 350 0.10 30 TYP MAX 10 UNITS pA GW pF nm A/W V W/ Hz nS 5 2 340 0.18 50 5.0x10-14 190 13 1100 **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 * Phone (805) 987-0146 * Fax (805) 484-9935 * www.advancedphotonix.com 1150 |
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